Power
Transistors
2SB1361
Silicon
PNP triple diffusion planar type
For high power amplification Complementary to 2SD2052
Unit: mm
q
q q q
16.
2±0.
5 12.
5 3.
5 Solder Dip
Satisfactory foward current transfer ratio hFE vs.
collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –150 –150 –5 –15 –9 100 3 150 –55 to +150 Unit V V V A A W ˚C ˚C
0.
7
s Features
15.
0±0.
3 11.
0±0.
2
5.
0±0.
2 3.
2
21.
0±0.
5 15.
0±0.
2
φ3.
2±0.
1
2.
0±0.
2
2.
0±0.
1 0.
6±0.
2
1.
1±0.
1 5.
45±0.
3 10.
9±0.
5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter...