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2SK3316
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3316
Switching
Regulator Applications
z Fast reverse recovery time z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : trr = 60 ns (typ.
) : RDS (ON) = 1.
6 Ω (typ.
) : |Yfs| = 3.
8 S (typ.
) Unit: mm
z Built-in high-speed free-wheeling diode
: IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ...