Low frequency
transistor (−20V,−5A)
2SB1412
zFeatures 1) Low VCE(sat).
VCE(sat) = −0.
35V (Typ.
) (IC/IB = −4A / −0.
1A) 2) Excellent DC current gain characteristics.
3) Complements the 2SD2118.
zStructure Epitaxial planar type
PNP silicon
transistor
zDimensions (Unit : mm)
2SB1412
ROHM : CPT3 EIAJ : SC-63
∗ Denotes hFE
(1) Base (2) Collector (3) Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−30
Collector-emitter voltage
VCEO
−20
Emitter-base voltage
VEBO
−6
Collector current
−5 IC
−10
Collector power
dissipation
2SB1412
PC
1 10
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to 150
∗1 Single pulse, Pw=10m...