Power
Transistors
2SB1503
Silicon
PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2276
6.
0
20.
0±0.
5 φ 3.
3±0.
2 5.
0±0.
3 3.
0
Unit: mm
26.
0±0.
5
10.
0
s Features
q q q
Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): –2.
5V
1.
5
2.
0
4.
0
1.
5
Solder Dip
s
20.
0±0.
5 2.
5
2.
0±0.
3 3.
0±0.
3 1.
0±0.
2
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –160 –140 –5 –12 –7 120 3.
5 150 –55 to +150 Unit V V V A
2.
7±0.
3
0.
6±0.
2 5.
45±0.
3 10.
9±0.
5
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collecto...