www.
DataSheet.
co.
kr
ME4435
P-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4435 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● -30V/-9.
1A,RDS(ON)=20mΩ@VGS=-10V ● -30V/-6.
9A,RDS(ON)=35mΩ@VGS=-4.
5V ● Super high density cell design for extre...