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SMD Type
MOS Field Effect Power
Transistors 2SJ325
Features
Low on-state resistance RDS(on)=83m RDS(on)=0.
15 (VGS=-10V,ID=-2A)
+0.
15 5.
55-0.
15
+0.
15 6.
50-0.
15 +0.
2 5.
30-0.
2
IC MOSFET
TO-252
+0.
15 1.
50-0.
15
+0.
1 2.
30-0.
1 +0.
8 0.
50-0.
7
Unit: mm
+0.
2 9.
70-0.
2
+0.
1 0.
80-0.
1
+0.
15 0.
50-0.
15
Built-in G-S Gate Protection Diode
0.
127 max
+0.
28 1.
50-0.
1
+0.
25 2.
65-0.
1
1 Gate 2 Drain 3 Source
2.
3
+0.
15 4.
60-0.
15
+0.
1 0.
60-0.
1
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage (DC) Gate to source voltage (AC) Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s;...