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Freescale Semiconductor Technical Data
Document Number: MRFE6VP5600H Rev.
1, 1/2011
RF Power Field Effect
Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.
They are unmatched input and output designs allowing wide frequency range utilization, between 1.
8 and 600 MHz.
• Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type Pulsed (100 μsec, 20% Duty Cycle) CW Pout (W) 600 Peak 600 Avg.
f (MHz) 230 230 Gps (dB) 25.
0 24.
6 ηD (%) 74.
6 75.
2 IRL (dB) --18 ...