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MRFE6VP5600HSR6

Part Number	MRFE6VP5600HSR6
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Dec 11, 2011
Detailed Description	www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 1, 1/2011 RF Power Fiel...
Datasheet	MRFE6VP5600HSR6 PDF File

Overview

www.
DataSheet.
co.
kr Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev.
1, 1/2011 RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.
They are unmatched input and output designs allowing wide frequency range utilization, between 1.
8 and 600 MHz.
• Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (100 μsec, 20% Duty Cycle) CW Pout (W) 600 Peak 600 Avg.
f (MHz) 230 230 Gps (dB) 25.
0 24.
6 ηD (%) 74.
6 75.
2 IRL (dB) --18 ...

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MRFE6VP5600HSR6 RF Power Field Effect Transistors - Freescale Semiconductor

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