Power
Transistors
2SB930, 2SB930A
Silicon
PNP epitaxial planar type
10.
0±0.
3 1.
5±0.
1
8.
5±0.
2 6.
0±0.
5 3.
4±0.
3
Unit: mm
1.
0±0.
1
For power amplification Complementary to 2SD1253 and 2SD1253A
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
1.
5max.
1.
1max.
10.
5min.
2.
0
0.
8±0.
1
0.
5max.
2.
54±0.
3 5.
08±0.
5 1 2 3
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –5 –8 –4 40 1.
3 150 –55 to +150 Unit V 2SB930 2...