Power
Transistors
2SB954, 2SB954A
Silicon
PNP epitaxial planar type
For power amplification
s Features
q q q
Unit: mm
0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 φ3.
1±0.
1 1.
4±0.
1 1.
3±0.
2 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 3 4.
2±0.
2
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –5 –2 –1 30 2 150 –55 to +150 Unit V 2SB954 2SB954A 2SB954
14.
0±0.
5
base voltage Collector to
emitter voltage 2SB954A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
Solder Dip
4.
0
Collector to
16.
7±0.
3
7.
5±0.
2
High f...