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2SB950A

Part Number	2SB950A
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Oct 25, 2013
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min.)@IC= -3A ·High Speed Sw...
Datasheet	2SB950A PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min.
)@IC= -3A ·High Speed Switching ·Complement to Type 2SD1276A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 2 W 40 150 ℃ Tstg Sto...

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