| Part Number | 2SC2314 |
| Manufacturer | Sanyo Semicon Device |
| Title | NPN Epitaxial Planar Silicon Transistor |
| Description | Ordering number:EN485F NPN Epitaxial Planar Silicon Transistor 2SC2314 27MHz CB Transceiver Driver Applications Package Dimensions unit:mm 2009B ... |
| Features |
100 E 200 160 F 320
1 : Emitter 2 : Collector 3 : Base
Ratings 75 75 45 5 1.0 1.5
750 5
150 –55 to +150 Unit V V V V A A mW W ˚C ˚C Ratings min typ 75 75 45 5 max 1.0 1.0 Unit µA µA V V V V Any and all SANYO products described or contained herein do not have specifications that can handle ap... |
| File Size | 95.50KB |
| Datasheet |
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2SC2310 : 2SC458 (LG), 2SC2310 Silicon NPN Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SA1031 and 2SA1032 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC458 (LG) 30 30 5 100 –100 200 150 –55 to +150 2SC2310 55 50 5 100 –100 200 150 –55 to +150 Unit V V V mA mA mW °C °C 2 2SC458 (LG), 2SC2310 Electrical Characteristics (Ta = 25°C) 2SC458 (LG) Item Collector to base .
2SC2310 : TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features 2SA1029 。 Complementary pair with 2SA1029. / Applications 。 Low frequency low noise amplifier. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range B 100~200 C 160~320 http://www.fsbrec.com 1/6 2SC2310 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Emitter Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC .
2SC2310 : ST 2SC2310 NPN Silicon Epitaxial Planar Transistor low frequency ,low noise amplifier . The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25 OC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC -IE Ptot Tj TS G S P FORM A IS AVAILABLE Value 55 50 5 100 100 200 150 -55 to +150 Unit V V V mA mA mW OC OC РАДИОТЕХ Тел.: (495) 795-0805 Факс: (495) 23.
2SC2310 : 2SC2310 NPN Silicon Epitaxial Planar Transistor low frequency, low noise amplifier. The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 12 V, IC = 2 mA Group Current Gain Collector Base Cutoff Current at VCB = 18 V Emitter Base Cutoff Current at VEB = 2 V Collector Base Breakdown Voltag.
2SC2312 : www.DataSheet4U.net .
2SC2312 : ELEFLOW TECHNOLOGIES www.eleflow.com 2SC2312 www.DataSheet4U.net 1 ELEFLOW TECHNOLOGIES www.eleflow.com 2SC2312 2 .
2SC2312 : www.DataSheet4U.net .
2SC2312 : Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: PIN 1. 2. 3. 4. K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min. at 18.5 W/27 MHz Emitter ballasted construction V BASE COLLECTOR EMITTER COLLECTOR G N D DIMENSIONS UNIT mm inches A 15.75 14.48 0.620 0.570 B 10.28 9.66 0.405 0.380 C 4.82 4.07 0.19 0.16 D 0.88 0.64 0.035 0.025 F 3.73 3.61 0.147 0.142 G 2.66 2.42 0.105 0.095 H 3.93 2.8 0.155 0.110 J 0.64 0.46 0.025 0.018 K 14.27 12.70 0.562 0.500 L 1.52 1.15 0.060 0.045 N 5.33 4.83 0.210 0.190 Q 3.04 2.54 0.12 0.10 R 2.79 2.04 0.11 0.08 S 1.39 1.15 0.055 0.045 T 6.47 5.97 0.255 0.235 U 1.27 0.00 0.05 0.00.
2SC2314 : 27 MHz CB Transceiver Driver Applications ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter l Value Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Dissipation at Max. Operating Junction Temperature Storage Temperature VCEO VEBO IC ICP Ptot Tj Tstg 45 V 5.0 V 1.0 A 1.5 A 5.0 W 150 oC -55~150 oC TO-126 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Collector Cut-off Current Emitter Cut-off Current ICBO IEBO VCB=40V, IE=0 VEB=4.0V, IC=0 Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product VCEO.
2SC2314 : ·Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE=150Ω ·Collector Current- :IC=1.5A ·Low Saturation Voltage : VCE(sat)=0.6V(MAX)@ IC=0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 75 V VCER Collector-Emitter Voltage RBE=150Ω 75 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.5 A 0.8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2314 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark i.
2SC2314 : .
2SC2315 : .
2SC2316 : ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semicond.
2SC2316 : .
2SC2318 : SILICON NPN EPITAXIAL PLANAR TYPE HIGH POWER AMPLIFIER FOR CATV APPLICATIONS. FEATURES . Wide Band and High Gain for Class A Amplifier. Unit Ln mm 09.39MAX. _ £*8.45MAX * X . All Electrodes Insulated from Case. MAXIMUM RATINGS (Ta=25 °C) 00.4:5 1 I1 05.08 . «5 •z, 3 o 05 ^ \ CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) SYMBOL VcBO VCEO Vebo ic pc Junction Temperature Storage Temperature Range TJ T stg RATING 40 15 3.5 350 3.5 175 -65-175 UNIT V V V mA W °C °C :?'-' j\ \\kL / 45°\ yk,r.\* / 1. 2. 3. 4. EMITTER BASE COLLECTOR CASE JEDEC EIA J TOSHIBA TO-33 TC-5 TB-i 4B , 2-8D1A.