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INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low Collector-Emitter Saturation VoltageVce(sat)=0.
8V(Max)@Ic=10A ·Low Leakage Icbo=1mA(max)@140V ·High Current-Gain-Bandwidth ProductfT=1MHz(min)@Ic=1A APPLICATIONS ·Designed for power amplifier and switching applications.
·For ultimate circuit performance based on the design requirements.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCBO VEBO IC IB
B
MJ3773
PARAMETER Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature Range
VALUE...