BFU710F
NPN wideband silicon germanium RF
transistor
Rev.
1 — 20 April 2011
Product data sheet
1.
Product profile
CAUTION
1.
1 General description
NPN silicon germanium microwave
transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.
20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.
2 Features and benefits
Low noise high gain microwave
transistor Noise figure (NF) = 1.
45 dB at 12 GHz High maximum power gain 14 dB at 12 GHz 110 GHz fT silicon germanium tec...