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BFU710F

NXP Semiconductors
Part Number BFU710F
Manufacturer NXP Semiconductors
Description NPN wideband silicon germanium RF transistor
Published Jan 15, 2012
Detailed Description BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile C...
Datasheet PDF File BFU710F PDF File

BFU710F
BFU710F

Overview
BFU710F NPN wideband silicon germanium RF transistor Rev.
1 — 20 April 2011 Product data sheet 1.
Product profile CAUTION 1.
1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.
20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.
2 Features and benefits „ Low noise high gain microwave transistor „ Noise figure (NF) = 1.
45 dB at 12 GHz „ High maximum power gain 14 dB at 12 GHz „ 110 GHz fT silicon germanium tec...


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