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2SC2500
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
2SC2500
Strobe Flash Applications Medium-Power Amplifier Applications
Unit: mm
•
High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.
5 A) : hFE (2) = 70 (min), 200 (typ.
), (VCE = 1 V, IC = 2 A)
•
Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 2 A, IB = 50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rat...