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Part Number
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SI6467BDQ |
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Manufacturer
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Vishay Siliconix |
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Description
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P-Channel MOSFET |
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Published
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Jan 20, 2012 |
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Detailed Description
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www.DataSheet.co.kr
Si6467BDQ
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(o...
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Datasheet
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SI6467BDQ
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Overview
www.
DataSheet.
co.
kr
Si6467BDQ
New Product
Vishay Siliconix
P-Channel 1.
8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.
0125 @ VGS = -4.
5 V -12 0.
0155 @ VGS = -2.
5 V 0.
020 @ VGS = -1.
8 V
ID (A)
-8.
0 - 7.
0 - 6.
0
S*
TSSOP-8
D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D 7 S 6 S 5 D G * Source Pins 2, 3, 6 and 7 must be tied common.
Si6467BDQ
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_...
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