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SI6467BDQ

Part Number	SI6467BDQ
Manufacturer	Vishay Siliconix
Description	P-Channel MOSFET
Published	Jan 20, 2012
Detailed Description	www.DataSheet.co.kr Si6467BDQ New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(o...
Datasheet	SI6467BDQ PDF File

Overview

www.
DataSheet.
co.
kr Si6467BDQ New Product Vishay Siliconix P-Channel 1.
8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
0125 @ VGS = -4.
5 V -12 0.
0155 @ VGS = -2.
5 V 0.
020 @ VGS = -1.
8 V ID (A) -8.
0 - 7.
0 - 6.
0 S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D 7 S 6 S 5 D G * Source Pins 2, 3, 6 and 7 must be tied common.
Si6467BDQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs -12 "8 - 8.
0 Steady State Unit V -6.
8 -5.
4 -30 A -0.
95 1.
05 0.
67 -55 to 150 W _C ID IDM IS PD TJ, Tstg -6.
5 -1.
35 1.
5 1.
0 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a.
Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72087 S-22382—Rev.
A, 30-Dec-02 www.
vishay.
com Steady State Steady State RthJA RthJF Symbol Typical 65 100 43 Maximum 83 120 52 Unit _C/W 1 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr Si6467BDQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -450 mA VDS = 0 V, VGS = "8 V VDS = -9.
6 V, VGS = 0 V VDS = -9.
6 V, VGS = 0 V, TJ = 70_C VDS -5 V, VGS = -4.
5 V VGS = -4.
5 V, ID = -8.
0 A Drain-Source On-State Resistancea rDS(on) VGS = -2.
5 V, ID = -7.
0 A VGS = -1.
8 V, ID = -5.
8 A Forward Transconductancea gfs VSD VDS = -5 V, ID = -8.
0 A IS = -1.
5 A, VGS = 0 V -20 0.
010 0.
0125 0.
016 44 -0.
56 -1.
1 0.
0125 0.
0155 0.
020 W W S V -0.
45 -0.
75 "100 -1 -25 V nA mA A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate C...

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