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Part Number
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TSHG5410 |
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Manufacturer
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Vishay Siliconix |
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Description
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High Speed Infrared Emitting Diode |
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Published
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Feb 2, 2012 |
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Detailed Description
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www.DataSheet.co.kr
TSHG5410
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
FE...
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Datasheet
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TSHG5410
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Overview
www.
DataSheet.
co.
kr
TSHG5410
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
FEATURES
• • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 18° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
94 8390
DESCRIPTION
TSHG5410 is an infrared, 850 nm emitting diode...
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