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TSHG5410

Vishay Siliconix
Part Number TSHG5410
Manufacturer Vishay Siliconix
Description High Speed Infrared Emitting Diode
Published Feb 2, 2012
Detailed Description www.DataSheet.co.kr TSHG5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FE...
Datasheet PDF File TSHG5410 PDF File

TSHG5410
TSHG5410

Overview
www.
DataSheet.
co.
kr TSHG5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 18° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 8390 DESCRIPTION TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
in APPLICATIONS • Infrared radiation source for operation with CMOS cameras • High speed IR data transmission PRODUCT SUMMARY COMPONENT TSHG5410 Ie (mW/sr) 90 ϕ (deg) ± 18 λp (nm) 850 tr (ns) 20 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHG5410 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81811 Rev.
1.
2, 08-Jul-09 For technical questions, contact: emittertechsupport@vishay.
com www.
vishay.
com 1 Datasheet pdf - http://www.
DataSheet4U.
net/ TEST CONDITION SYMBOL VR IF VALUE 5 100 200 1 180 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W tp/T = 0.
5, tp = 100 µs tp = 100 µs IFM IFSM PV Tj Tamb Tstg t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB Tsd RthJA www.
DataSheet.
co.
kr TSHG5410 ...


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