Part Number
|
TSHG8200 |
Manufacturer
|
Vishay Siliconix |
Description
|
High Speed Infrared Emitting Diode |
Published
|
Feb 2, 2012 |
Detailed Description
|
www.DataSheet.co.kr
TSHG8200
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
FE...
|
Datasheet
|
TSHG8200
|
Overview
www.
DataSheet.
co.
kr
TSHG8200
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
FEATURES
• • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
94 8389
DESCRIPTION
TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double heter...
Similar Datasheet