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TSHG8200

Vishay Siliconix
Part Number TSHG8200
Manufacturer Vishay Siliconix
Description High Speed Infrared Emitting Diode
Published Feb 2, 2012
Detailed Description www.DataSheet.co.kr TSHG8200 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FE...
Datasheet PDF File TSHG8200 PDF File

TSHG8200
TSHG8200

Overview
www.
DataSheet.
co.
kr TSHG8200 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 8389 DESCRIPTION TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
in APPLICATIONS • Infrared radiation source for operation with CMOS cameras (illumination) • High speed IR data transmission • Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT TSHG8200 I...


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