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2SC2782

Part Number 2SC2782
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Output Pow...
Datasheet 2SC2782




Overview
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po = 80W (Min.
) (f = 175MHz, VCC = 12.
5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 36 16 4 20 220 175 −65~175 UNIT V V V A W °C °C Unit in mm JEDEC EIAJ TOSHIBA Weight: 5.
5g — — 2−13C1A 000707EAA1 • TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunctio...






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