TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
2SC2873
Power Amplifier Applications Power Switching Applications
2SC2873
Unit: mm
• Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.
0 μs (typ.
) • Small flat package • PC = 1.
0 to 2.
0 W (mounted on a ceramic substrate) • Complementary to 2SA1213
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
2
A
IB
0.
4
A
PC
500
PC
mW
1000
(Note...