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2SC2812

Part Number	2SC2812
Manufacturer	GME
Description	Silicon Epitaxial Planar Transistor
Published	Jul 16, 2017
Detailed Description	Production specification Silicon Epitaxial Planar Transistor FEATURES z High DC current gain:hFE=200TYP (VCE=6.0V,IC=1...
Datasheet	2SC2812 PDF File

Overview

Production specification Silicon Epitaxial Planar Transistor FEATURES z High DC current gain:hFE=200TYP (VCE=6.
0V,IC=1.
0mA).
z High Voltage:VCEO=50V.
Pb Lead-free 2SC2812 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor.
z Audio frequency general purpose amplifier.
ORDERING INFORMATION Type No.
Marking 2SC2812 L4/L5/L6/L7 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 55 50 5 150 200 -55 to +150 Units V V V mA mW ℃ C241 Rev.
A www.
gmicroelec.
com 1 Production specification Silicon Epitaxial Planar Transistor 2SC2812 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 55 V Collector-emitter breakd...

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