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Dual Enhancement Mode Field Effect
Transistor (N and P Channel)
CEM2939
5
FEATURES
20V, 6.
5A, RDS(ON) = 30mΩ @VGS = 4.
5V.
RDS(ON) = 43mΩ @VGS = 2.
5V.
-20V, -4.
8A, RDS(ON) = 55mΩ @VGS = -4.
5V.
RDS(ON) = 90mΩ @VGS = -2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 8 D1 7 D2 6 D2 5
SO-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 20 P-Channel -20 Units V V A A W C
±12
6.
5 20 2.
...