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CEM2939

Part Number	CEM2939
Manufacturer	CET
Description	Dual Enhancement Mode Field Effect Transistor
Published	Mar 5, 2012
Detailed Description	www.DataSheet.co.kr Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM2939 5 FEATURES 20V, 6.5A, RDS...
Datasheet	CEM2939 PDF File

Overview

www.
DataSheet.
co.
kr Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM2939 5 FEATURES 20V, 6.
5A, RDS(ON) = 30mΩ @VGS = 4.
5V.
RDS(ON) = 43mΩ @VGS = 2.
5V.
-20V, -4.
8A, RDS(ON) = 55mΩ @VGS = -4.
5V.
RDS(ON) = 90mΩ @VGS = -2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 8 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 20 P-Channel -20 Units V V A A W C ±12 6.
5 20 2.
0 -55 to 150 ±12 -4.
8 -20 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.
5 Units C/W Specification and data are subject to change without notice .
1 Rev 3.
2007.
Feb http://www.
cetse...

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CEM2939 Dual Enhancement Mode Field Effect Transistor - CET

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