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Part Number
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2SC3495 |
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Manufacturer
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Sanyo Semicon Device |
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Description
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NPN Epitaxial Planar Silicon Transistor |
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Published
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Mar 22, 2005 |
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Datasheet
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2SC3495
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Features
· Adoption of FBET process. · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). · Small Cob (Cob=1.8pF typ).
Package Dimensions
unit:m...
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