Power
Transistors
2SC3506
Silicon
NPN triple diffusion planar type
For high-speed switching
Unit: mm
15.
0±0.
3
5.
0±0.
2
(0.
7)
■ Features
11.
0±0.
2
(3.
2)
• High-speed switching
21.
0±0.
5 15.
0±0.
2
• High collector-base voltage (Emitter open) VCBO
φ 3.
2±0.
1
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw
2.
0±0.
2
2.
0±0.
1
■ Absolute Maximum Ratings TC = 25°C
1.
1±0.
1
0.
6±0.
2
/ Parameter
Symbol Rating
Unit
16.
2±0.
5 (3.
5)
Solder Dip
e Collector-base voltage (Emitter open) VCBO
1 000
V
c type) Collector-emitter voltage (E-B short) VCES
1 000
V
n d ge.
ed Collector-emitter voltage (Base ...