DATA SHEET SHEET DATA
SILICON
TRANSISTOR
2SC3583
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR
DESCRIPTION
The 2SC3583 is an
NPN epitaxial silicon
transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.
This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique.
PACKAGE DIMENSIONS (Units: mm)
2.
8±0.
2
0.
4 −0.
05
+0.
1
1.
5
0.
65 −0.
15
+0.
1
0.
95 0.
95
FEATURES
• NF • Ga 1.
2 dB TYP.
13 dB TYP.
@f = 1.
0 GHz @f = 1.
0 GHz
2.
9±0.
2
2
ABSOLUTE MAXIM...