DATA SHEET
SILICON
TRANSISTOR
2SC3603
NPN EPITAXIAL SILICON
TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3603 is an
NPN epitaxial
transistor designed for lownoise amplification at 0.
5 to 4.
0 GHz.
This
transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.
PACKAGE DIMENSIONS (in mm)
E
3.
8 MIN.
FEATURES
• Low noise : NF = 2.
1 dB TYP.
@ f = 2.
0 GHz • High power gain : GA = 10 dB TYP.
@ f = 2.
0 GHz
C
3.
8 MIN.
3.
8 MIN.
B
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
SYMBOL VCBO VCEO VEBO...