Ordering number:ENN2007A
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1419/2SC3649
High-Voltage Switching Applications
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Ultrasmall size making it easy to provide high-
density hybrid ICs.
Package Dimensions
unit:mm 2038A
[2SA1419/2SC3649]
4.
5 1.
6 1.
5
1.
0 2.
5 4.
25max
( ) : 2SA1419
Specifications
Absolute Maximum Ratings at Ta = 25˚C
0.
4 0.
5
3 1.
5 2 3.
0
1
0.
75
0.
4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector D...