Ordering number:EN1779A
NPN Epitaxial Planar Silicon
Transistor
2SC3651
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· LF amplifiers, various drivers, muting circuit.
Features
· High DC current gain (hFE=500 to 2000).
· High breakdown voltage (VCEO≥100V).
· Low collector-to-emitter saturation voltage
(VCE(sat)≤0.
5V).
· High VEBO (VEBO≥15V).
· Very small size making it easy to provide high-
density, small-sized hybrid IC’s.
Package Dimensions
unit:mm 2038
[2SC3651]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collecto...