TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
2SC3670
Strobe Flash Applications Medium Power Amplifier Applications
2SC3670
Unit: mm
• High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.
5 A) : hFE (2) = 70 (min), 200 (typ.
) (VCE = 1 V, IC = 2 A)
• Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 2 A, IB = 50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed (Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IC
ICP
IB PC Tj Tstg
3...