2SC3680
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage Switching
Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3680 900 800 7 7(Pulse14) 3.
5 120(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching
Regulator and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=3A IC=3A, IB=0.
6A IC=3A, IB=0.
6A VCE=12V, IE=–2A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.
5max 1.
2max 6typ 105typ
External Dimensions MT-100(TO3P)
5.
0±0.
2 15.
6±0.
4 9.
6 2.
0 1.
8 4.
8±0.
2 2.
0±0.
1
2SC3680
Unit
µA µA
19.
9±0.
3
4.
0
V V MHz pF
a b
ø...