R6012ANX
Transistors
10V Drive Nch MOSFET
R6012ANX
zStructure Silicon N-channel MOSFET zDimensions (Unit : mm)
TO-220FM
10.
0
φ3.
2
4.
5 2.
8
zFeatures 1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
15.
0
12.
0
8.
0
2.
5
1.
3
1.
2
14.
0
0.
8
(1)Base (2)Collector (3)Emitter
2.
54
(1) (2) (3)
2.
54
0.
75
2.
6
zApplications Switching
zPackaging specifications
www.
DataSheet.
co.
kr
zInner circuit
Bulk − 500
∗1
Package Type Code Basic ordering unit (pieces) R6012ANX
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Bod...