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R6012ANX

Rohm
Part Number R6012ANX
Manufacturer Rohm
Description Drive Nch MOSFET
Published Apr 3, 2012
Detailed Description R6012ANX Transistors 10V Drive Nch MOSFET R6012ANX zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TO-220FM...
Datasheet PDF File R6012ANX PDF File

R6012ANX
R6012ANX

Overview
R6012ANX Transistors 10V Drive Nch MOSFET R6012ANX zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TO-220FM 10.
0 φ3.
2 4.
5 2.
8 zFeatures 1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
15.
0 12.
0 8.
0 2.
5 1.
3 1.
2 14.
0 0.
8 (1)Base (2)Collector (3)Emitter 2.
54 (1) (2) (3) 2.
54 0.
75 2.
6 zApplications Switching zPackaging specifications www.
DataSheet.
co.
kr zInner circuit Bulk − 500 ∗1 Package Type Code Basic ordering unit (pieces) R6012ANX zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed Symbol VDSS VGSS Continuous Pulsed Continuous Pulse...


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