Data Sheet
Schottky Barrier Diode
RBQ20NS65A
lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm)
lFeatures 1)Cathode Common Dual type.
(LPDS) 2)Low IR.
BQ20NS 65A
①
lConstruction Silicon epitaxial planer
lStructure
ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day
① ② lTaping dimensions (Unit : mm)
③
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lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) Reverse voltage (DC) VR Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) (*2) Junction temperature Tj Storage temperature Tstg
Limits 65 65 20 100 150 -40 to +150
Unit V V A A °C °C
(*1) 60Hz ...