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RBQ20NS65A

Rohm
Part Number RBQ20NS65A
Manufacturer Rohm
Description Schottky Barrier Diode
Published Apr 3, 2012
Detailed Description Data Sheet Schottky Barrier Diode RBQ20NS65A lApplications General rectification 　　　lDimensions (Unit : mm) 　lLand size...
Datasheet PDF File RBQ20NS65A PDF File

RBQ20NS65A
RBQ20NS65A

Overview
Data Sheet Schottky Barrier Diode RBQ20NS65A lApplications General rectification 　　　lDimensions (Unit : mm) 　lLand size figure (Unit : mm) lFeatures 1)Cathode Common Dual type.
(LPDS) 2)Low IR.
BQ20NS 65A ① lConstruction Silicon epitaxial planer lStructure ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day ① ② lTaping dimensions (Unit : mm) ③ www.
DataSheet.
co.
kr lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) Reverse voltage (DC) VR Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) (*2) Junction temperature Tj Storage temperature Tstg Limits 65 65 20 100 150 -40 to +150 Unit V V A A °C °C (*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25 °C.
lElectrical characteristics (Tj=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min.
Typ.
Max.
0.
69 0.
3 Unit V mA IF=10A VR=65V Conditions www.
rohm.
com © 2011 ROHM Co.
, Ltd.
All rights rese...


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