Power
Transistors
2SC3979, 2SC3979A
Silicon
NPN triple diffusion planar type
4.
2±0.
2
16.
7±0.
3 7.
5±0.
2 0.
7±0.
1
For high breakdown voltage high-speed switching ■ Features
10.
0±0.
2 5.
5±0.
2
Unit: mm 4.
2±0.
2 2.
7±0.
2
• High-speed switching
• High collector-base voltage (Emitter open) VCBO
φ 3.
1±0.
1
• Wide safe operation area
• Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw
1.
4±0.
1
1.
3±0.
2
/ ■ Absolute Maximum Ratings TC = 25°C
14.
0±0.
5 Solder Dip
(4.
0)
0.
8±0.
1
0.
5+–00.
.
12
Parameter
Symbol Rating
Unit
e e) Collector-base voltage 2SC3979 VCBO
900
V
c typ (Emitter open)
2SC3979A
1 000
n ...