Ordering number:EN2509C
NPN Triple Diffused Planar Silicon
Transistor
2SC3996
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ).
· High reliability (adoption of HVP process).
· High breakdown voltage (VCBO=1500V).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2048B
[2SC3996]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Condit...