Ordering number : EN2732A
2SC3998
SANYO Semiconductors
DATA SHEET
2SC3998
NPN Triple Diffused Planar Silicon
Transistor
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
• High speed (tf=100ns typ).
• High breakdown voltage (VCBO=1500V).
• High reliability (adoption of HVP process).
• Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP
PC
Tj Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
...