RJK1211DNS

Preliminary Datasheet RJK1211DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      R07DS0090EJ0300 Rev.3.00 Feb 01, 2012 Outline RENESAS Package code: PWSN0008JB-A (Packag...