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RJK1211DPA

Renesas
Part Number RJK1211DPA
Manufacturer Renesas
Description N-Channel Power MOSFET
Published May 2, 2012
Detailed Description Preliminary Datasheet RJK1211DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable ...
Datasheet PDF File RJK1211DPA PDF File

RJK1211DPA
RJK1211DPA


Overview
Preliminary Datasheet RJK1211DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 mΩ typ.
(at VGS = 10 V) • Pb-free • Halogen-free • • • • • R07DS0089EJ0300 Rev.
3.
00 Apr 11, 2011 Outline RENESAS Package code: PWSN0008DC-B (Package name: WPAK(3)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain www.
DataSheet.
co.
kr S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 μs, duty cycle ≤ 1% 2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-c Note3 Tch Tstg Ratings 120 +12, -5 5 15 5 3 0.
77 15 8.
33 15...



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