Preliminary Datasheet RJK6024DPE 600V - 0.
4A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 28  typ.
(at ID = 0.
2 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0424EJ0200 Rev.
2.
00 Feb 27, 2012 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1.
Gate 2.
Drain 3.
Source 4.
Drain 1 G 2 3 S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycl...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)