DatasheetsPDF.com

RJK6024DPD

Renesas Technology
Part Number RJK6024DPD
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Jul 23, 2010
Detailed Description Preliminary www.DataSheet4U.com Datasheet RJK6024DPD Silicon N Channel MOS FET High Speed Power Switching Features  Lo...
Datasheet PDF File RJK6024DPD PDF File

RJK6024DPD
RJK6024DPD

Overview
Preliminary www.
DataSheet4U.
com Datasheet RJK6024DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 28  typ.
(at ID = 0.
2 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting REJ03G1936-0100 Rev.
1.
00 Jun 01, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1.
2.
3.
4.
Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IDR(pulse)Note1 Pch Note2 ch-c Tch Tstg Ratings 600 30 0.
4 0.
6 0.
4 0.
6 27.
2 4.
58 150 –55 to +150 Unit V V A A A A W C/W C C REJ03G1936-0100 Rev.
1.
00 Jun 01, 2010 Page 1 of 6 RJK6024DPD Preliminary www.
DataSheet4U.
com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3.
Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 — — 3 — — — — — — — — — — — — — Typ — — — — 28 37.
5 7.
5 0.
9 30 14.
5 48 77 4.
3 0.
5 3.
2 0.
85 230 Max — 1 ±0.
1 5 42 — — — — — — — — — — 1.
45 — Unit V A A V  pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 0.
2 A, VGS = 10 V Note3 VDS = 25 V VGS = 0 f = 1 MHz ID = 0.
2 A VGS = 10 V RL = 1500...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)