Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ.
, tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat) = 1.
5 V typ.
Low leak current: ICES = 1 A max.
R07DS0465EJ0200 Rev.
2.
00 Jun 15, 2011 Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) 4 1.
Gate 2.
Collector 3.
Emitter 4.
Collector (Flange) E C G 12 3 Absolute Maximum Ratings (Tc = 25°C) www.
DataSheet.
co.
kr Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal imped...

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