DatasheetsPDF.com

RJP30H1DPD

Renesas
Part Number RJP30H1DPD
Manufacturer Renesas
Description N-Channel IGBT
Published May 2, 2012
Detailed Description Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features     Trench gate and thi...
Datasheet PDF File RJP30H1DPD PDF File

RJP30H1DPD
RJP30H1DPD

Overview
Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ.
, tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat) = 1.
5 V typ.
Low leak current: ICES = 1 A max.
R07DS0465EJ0200 Rev.
2.
00 Jun 15, 2011 Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) 4 1.
Gate 2.
Collector 3.
Emitter 4.
Collector (Flange) E C G 12 3 Absolute Maximum Ratings (Tc = 25°C) www.
DataSheet.
co.
kr Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal imped...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)