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Part Number
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RJP60D0DPE |
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Manufacturer
|
Renesas |
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Description
|
N-Channel IGBT |
|
Published
|
May 2, 2012 |
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Detailed Description
|
Preliminary Datasheet
RJP60D0DPE
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand t...
|
|
Datasheet
|
RJP60D0DPE
|
Overview
Preliminary Datasheet
RJP60D0DPE
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.
) Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(IC = 22 A, VGE = 15 V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding R07DS0172EJ0100 Rev.
1.
00 Nov 15, 2010
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
C 4
G 1 2 3 E
1.
Gate 2.
Collector 3.
Emitter 4.
Collecotor
www.
DataSheet.
co.
kr
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Juncti...
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