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RJP60D0DPE

Renesas
Part Number RJP60D0DPE
Manufacturer Renesas
Description N-Channel IGBT
Published May 2, 2012
Detailed Description Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand t...
Datasheet PDF File RJP60D0DPE PDF File

RJP60D0DPE
RJP60D0DPE

Overview
Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding R07DS0172EJ0100 Rev.
1.
00 Nov 15, 2010 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E 1.
Gate 2.
Collector 3.
Emitter 4.
Collecotor www.
DataSheet.
co.
kr Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tc = 25C Symbol VCES VGES IC IC ic(peak) Note1 PC Note2 j-c Note2 Tj Tstg Ratings 600 ±30 45 22 90 122 1.
02 150 –55 to +150 Unit V V A A A W °C/ W °C °C R07DS0172EJ0100 Rev.
1.
00...


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